200503313-3 adva nced power electronics corp. 1/6 ap40t03gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the ap40t03gs-hf-3 is in the to-263 package, which is widely used bv 30v fast switching performance r 25mw simple drive requirement low gate charge rohs-compliant , halogen-free i 28 a for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as dc/dc converters. the ap 40t03 gp-hf-3 is in the to-220 through-hole package which is used where a low pcb footprint or an attached heatsink is required. g d s to-263 (s) g d s to-220 (p) o rdering information ap40t03gs-hf-3t r rohs-compliant , halogen-free to-2 63, shipped on tape and reel ( 8 00 pcs /reel) AP40T03GP-HF-3tb rohs-compliant , halogen-free to-2 20, shipped in tubes symbol units v ds v gs i d at t c =2 5 c i d at t c =10 0 c i dm p d at t c =2 5 c t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4 c /w rthj-a max i mum thermal resistance, junction-ambient 62 c /w -55 to 150 c drain-source voltage 3 0 v parameter rating gate-source voltage 2 5 v continuous drain current 28 a continuous drain current 24 a pulsed drain curren t 1 95 a total power dissipation 31.25 w parameter storage temperature range operating junction temperature range -55 to 150 c g d s g d s
adva nced power electronics corp. 2/6 ap40t03gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v d bv dss /d t j breakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.032 - v/c r ds(on) static drain-source on-resistance v gs =10v, i d =18a - - 25 mw v gs =4.5v, i d =14a - - 45 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =18a - 15 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =24v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = 25v - - 100 na q g total gate charge 2 i d =18a - 8.8 - nc q gs gate-source charge v ds =20v - 2.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5.8 - nc t d(on) turn-on delay time 2 v ds =15v - 6 - ns t r rise time i d =18a - 62 - ns t d(off) turn-off delay time r g =3.3w, v gs =10v - 16 - ns t f fall time r d =0.83w - 4.4 - ns c iss input capacitance v gs =0v - 655 - pf c oss output capacitance v ds =25v - 145 - pf c rss reverse transfer capacitance f=1.0mhz - 95 - pf symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 28 a i sm pulsed source current ( body diode ) 1 --95 a v sd forward on voltage 2 t j =25c, i s =28a, v gs =0v - - 1.3 v notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%.
adva nced power electronics corp. 3/6 ap40t03gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0 25 50 75 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t c =150 o c 10v 8 .0v 6 .0v v g =4.0v 0 30 60 90 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t c =25 o c 10v 8 .0v 6 .0v v g =4 . 0 v 0.2 0.8 1.4 2.0 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d r ds(on) i d =18a v g =10v 10 30 50 70 0 5 10 15 v gs , gate-to-source voltage (v) r ds(on) ( m w ) i d =14a t c =2 5 c 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a ) t j =25 o c t j =150 o c 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(t h) (v )
adva nced power electronics corp. 4/6 ap40t03gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform typical electrical characteristics (cont.) t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10 v q gs q gd q g charge 1 10 100 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 3 6 9 12 03691 2 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =10v v ds =15v v ds =20v 10 100 1000 1 8 15 22 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss
adva nced power electronics corp. 5/6 ap40t03gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking information: to-220 product: ap40t03 gp = rohs-compliant halogen-free to-220 date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 f 3.71 3.84 3.96 e1 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. 2.54 ref. 7.4 ref, symbols 5.10 ref. e1 b b1 e d l4 l1 a c1 c l 40t03gp ywwsss f l5 e d1
adva nced power electronics corp. 6/6 ap40t03gp/s-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-263 marking information: to-263 product: ap40t03 package code: date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence gs = rohs-compliant halogen-free to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. symbols e b b1 e d l2 l3 c1 a . a1 l4 c ywwsss 40t03gs ywwsss e b b1 e d l2 l3 c1 a f a1 l4 c
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